vishay siliconix si4401bdy document number: 73140 s09-0866-rev. d, 18-may-09 www.vishay.com 1 p-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 40 0.014 at v gs = - 10 v - 10.5 40 0.021 at v gs = - 4.5 v - 8.7 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: si4401bdy-t1-e3 (lead (pb)-free) si4401bdy-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d - 10.5 - 8.7 a t a = 70 c - 8.3 - 5.9 pulsed drain current i dm - 50 continuous source current (diode conduction) a i s - 2.6 - 1.36 avalanche current l = 1 mh i as 30 single pulse avalanche energy e as 45 mj maximum power dissipation a t a = 25 c p d 2.9 1.5 w t a = 70 c 1.85 0.95 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 36 43 c/w steady state 70 84 maximum junction-to-foot (drain) steady state r thjf 16 21
www.vishay.com 2 document number: 73140 s09-0866-rev. d, 18-may-09 vishay siliconix si4401bdy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 70 c - 10 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 10.5 a 0.011 0.014 v gs = - 4.5 v, i d = - 8.7 a 0.0165 0.021 forward transconductance a g fs v ds = - 15 v, i d = - 10.5 a 26 s diode forward voltage a v sd i s = - 2.7 a, v gs = 0 v - 0.74 - 1.1 v dynamic b total gate charge q g v ds = - 15 v, v gs = - 5 v, i d = - 10.5 a 40 55 nc gate-source charge q gs 10 gate-drain charge q gd 14 gate resistance r g 1.4 2.8 4.2 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 6 16 25 ns rise time t r 15 25 turn-off delay time t d(off) 97 150 fall time t f 47 75 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/s 35 55 output characteristics 0 10 20 30 40 50 012345 v gs = 10 v thru 4 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v transfer characteristics 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 73140 s09-0866-rev. d, 18-may-09 www.vishay.com 3 vishay siliconix si4401bdy typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 1020304050 i d - drain current (a) v gs = 10 v v gs = 4.5 v r ds(on) - on-resistan ce ( ) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 v ds = 15 v i d = 10.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 50 10 1 v sd - source-to-drain voltage (v) i s - source current (a) t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 35 40 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 10.5 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) 0.00 0.01 0.02 0.03 0.04 0.05 0246810 i d = 10.5 a - on-resistance r ds(on) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 73140 s09-0866-rev. d, 18-may-09 vishay siliconix si4401bdy typical characteristics 25 c, unless otherwise noted threshold voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0 30 10 20 power (w) time (s) 1 600 100 10 - 1 10 - 2 10 5 25 15 safe operating area 100 1 0.1 1 10 100 0.01 10 100 ms i d - drain current (a) 0.1 limited by r ds(on) * t c = 25 c single pulse 1 s 10 s dc 1 ms 10 ms v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 73140 s09-0866-rev. d, 18-may-09 www.vishay.com 5 vishay siliconix si4401bdy typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73140 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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